Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers

US10170604B2 · kind B2 · utility

Assignee

• ATOMERA INCORPORATED · US

Inventors

• Robert J. Mears · Wellesley, US
• Hideki Takeuchi · Sakaki, JP
• Marek Hytha · Brookline, US

Key dates

• Filing date: Aug 7, 2017
• Grant date: Jan 1, 2019
• Expiry date: Aug 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A method for making a semiconductor device may include forming at least one a double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, and a forming first barrier layer on the first doped semiconductor layer and including a superlattice. The method may further include forming a first intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the first intrinsic semiconductor layer and also comprising the superlattice, forming a second intrinsic semiconductor layer on the second barrier layer, and forming a third barrier layer on the second intrinsic semiconductor layer and also comprising the superlattice. The method may further include forming a third intrinsic semiconductor layer on the third barrier layer, forming a fourth barrier layer on the third intrinsic semiconductor layer, and forming a second doped semiconductor layer on the fourth barrier layer.