Vertical transport field effect transistors

US10170617B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jiseok Kim · Allentown, US
• Hiroaki Niimi · Cohoes, US
• Hoon Kim · Seoul, KR
• Puneet Harischandra Suvarna · Albany, US
• Steven Bentley · Menands, US
• Jody A. Fronheiser · Delmar, US

Key dates

• Filing date: Feb 3, 2017
• Grant date: Jan 1, 2019
• Expiry date: Feb 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/252

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to vertical transport field effect transistor devices and methods of manufacture. A structure includes: a vertical fin structure having a lower dopant region, an upper dopant region and a channel region between the lower dopant region and the upper dopant region; and a doped semiconductor material provided on sides of the vertical fin structure at a lower portion. The lower dopant region being composed of the doped semiconductor material which is merged into the vertical fin structure at the lower portion.