Post-CMP removal using compositions and method of use
US10176979B2 · kind B2 · utility
7Cited by
41References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2013 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Feb 15, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.