Methods for gapfill in high aspect ratio structures
US10192775B2 · kind B2 · utility
5Cited by
32References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.