Semiconductor device containing oxygen-related thermal donors

US10192955B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Moriz Jelinek · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Werner Schustereder · Villach, AT
• Michael Stadtmueller · Villach, AT

Key dates

• Filing date: Sep 28, 2017
• Grant date: Jan 29, 2019
• Expiry date: Sep 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.