Tensile strained semiconductor photon emission and detection devices and integrated photonics system
US10193307B2 · kind B2 · utility
3Cited by
5References
21Claims
0Family size
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Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.