Photoresist topcoat compositions and methods of processing photoresist compositions

US10197918B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials LLC · US

Inventors

• Cong Liu · Lanzhou, CN
• Doris Kang · Shrewsbury, US
• Deyan Wang · Hudson, US
• Cheng-Bai Xu · Upton, US
• Mingqi Li · Sammamish, US
• Irvinder Kaur · Northborough, US

Key dates

• Filing date: Oct 12, 2017
• Grant date: Feb 5, 2019
• Expiry date: Oct 12, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0274
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.