Manufacturing method of metal gate structure
US10199228B2 · kind B2 · utility
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19References
8Claims
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Key dates
| Filing date | Apr 5, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Apr 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.