Substrate processing method, substrate processing apparatus, and storage medium
US10199240B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 29, 2012 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.