Multi-directional self-aligned multiple patterning

US10199270B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Colin Bombardier · Clifton Park, US
• Ming He · San Jose, US
• Vikrant Chauhan · Beacon, US
• Anbu Selvam KM Mahalingam · Mechanicville, US
• Keith Donegan · Saratoga Springs, US

Key dates

• Filing date: May 25, 2017
• Grant date: Feb 5, 2019
• Expiry date: May 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/528
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.