Patent · US Active

Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures

US10199372B2 · kind B2 · utility

0Cited by

7References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ingo Muri · Villach, AT
Iris Moder · Villach, AT
Oliver Hellmund · Straubing, DE
Johannes Baumgartl · Arnoldstein, AT
Annette Saenger · Dresden, DE
Barbara Eichinger · Villach, AT
Doris Sommer · Villach, AT
Jacob Tillmann Ludwig · Villach, AT

Key dates

Filing date	Jun 23, 2017
Grant date	Feb 5, 2019
Priority date	—
Expiry date	Jun 23, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/665
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first thickness is greater than the second thickness, the chip die having a front-side and a back-side, at least one passive electrical component provided at least one of in or over the chip die in the first area on the front-side, and at least one active electrical component provided at least one of in or over the chip die in the second area on the front-side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.