Methods for selective etching of a silicon material using HF gas without nitrogen etchants
US10204796B2 · kind B2 · utility
1Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Nov 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.