Structure with local contact for shorting a gate electrode to a source/drain region
US10204861B2 · kind B2 · utility
2Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jan 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.