Semiconductor device with diode region and trench gate structure

US10211306B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Siemieniec · Villach, AT
• Dethard Peters · Edenkoben, DE
• Romain Esteve · Munich, DE
• Wolfgang Bergner · Waldbüttelbrunn, DE
• Thomas Aichinger · Faak am See, AT
• Daniel Kueck · Villach, AT
• Roland Rupp · Achern, DE
• Bernd Zippelius · Erlangen, DE
• Karlheinz Feldrapp · Uttenreuth, DE
• Christian Strenger · Munich, DE

Key dates

• Filing date: Jan 10, 2018
• Grant date: Feb 19, 2019
• Expiry date: Jan 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.