Methods of non-destructive post tungsten etch residue removal
US10217627B2 · kind B2 · utility
1Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2013 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Dec 21, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B3/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having refractory metal portions disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon, forming a process gas comprising water vapor, maintaining a process pressure in the processing chamber above about 0.5 Torr, forming a plasma in the process gas to form an activated water vapor and exposing the refractory metal to the activated water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.