Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate
US10217826B2 · kind B2 · utility
1Cited by
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23Claims
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Key dates
| Filing date | Nov 20, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Mar 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Some demonstrative embodiments include a Metal-Oxide-Semiconductor (MOS) transistor including a multi-split gate. For example, an Integrated Circuit (IC) may include at least one MOS transistor, the MOS transistor may include a source; a drain; a body; and a multi-split gate including a control gate component configured to control conductivity of the MOS transistor, and at least first and second field plate gate components, the first field plate gate component is electrically isolated from the second field plate gate component, the first and second field plate gate components are electrically isolated from the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.