Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
US10236177B1 · kind B1 · utility
399Cited by
817References
20Claims
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Assignee
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Key dates
| Filing date | Aug 22, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Aug 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.