Hydrogenation and nitridization processes for reducing oxygen content in a film
US10236207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76889
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.