Methods, apparatus and system for forming wrap-around contact with dual silicide

US10236218B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Julien Frougier · Albany, US
• Hiroaki Niimi · Cohoes, US
• Nigel G. Cave · Austin, US
• Xusheng Wu · Hsinchu, TW

Key dates

• Filing date: Feb 20, 2018
• Grant date: Mar 19, 2019
• Expiry date: Feb 20, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

At least one method, apparatus and system disclosed herein involves forming semiconductor devices comprising dual silicides in contacts to FinFETs. The semiconductor device may comprise a PFET fin; an NFET fin; a first metal silicide around the NFET fin; a second metal silicide around the PFET fin; and a fill metal around the second metal silicide, above the PFET fin, and above the NFET fin. Methods of forming such devices are also disclosed.