Methods of forming an array of elevationally-extending strings of memory cells
US10236301B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2018 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Feb 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an array of elevationally-extending strings of memory cells comprises forming conductively-doped semiconductor material directly above and electrically coupled to metal material. A stack comprising vertically-alternating insulative tiers and wordline tiers is formed directly above the conductively-doped semiconductor material. Horizontally-elongated trenches are formed through the stack to the conductively-doped semiconductor material. The conductively-doped semiconductor material is oxidized through the trenches to form an oxide therefrom that is directly above the metal material. Transistor channel material is provided to extend elevationally along the alternating tiers. The wordline tiers are provided to comprise control-gate material having terminal ends corresponding to control-gate regions of individual memory cells. Charge-storage material is between the transistor channel material and the control-gate regions. Insulative charge-passage material is between the transistor channel material and the charge-storage material. A charge-blocking region is between the charge-storage material and individual of the control-gate regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.