Semiconductor electrostatic discharge protection device
US10242978B1 · kind B1 · utility
1Cited by
0References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 26, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Oct 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/911
Abstract
The present disclosure provides a semiconductor ESD protection device. The semiconductor ESD protection device includes a substrate including a first conductivity type, a gate formed on the substrate, a source region and a drain region formed in the substrate, and a body region formed in the substrate. The substrate and the body region include a first conductivity type. The source region and the drain region include a second conductivity type. And the first conductivity type and the second conductivity type are complementary to each other. The body region is electrically connected to the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.