Structures and methods for embedded magnetic random access memory (MRAM) fabrication
US10243020B1 · kind B1 · utility
11Cited by
11References
13Claims
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Key dates
| Filing date | Oct 31, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Oct 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) device includes a conductor disposed in an insulating material of a lower wiring layer, a magnetic tunnel junction (MTJ) structure formed in an upper wiring layer, and a landing pad formed in an intermediary wiring layer between the lower and upper wiring layers, the landing pad extending from a top surface of the conductor to a height above the intermediary wiring layer, wherein the landing pad connects the MJT structure to the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.