Bipolar transistor with superjunction structure

US10249746B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Stephan Voss · Munich, DE

Key dates

• Filing date: Dec 28, 2017
• Grant date: Apr 2, 2019
• Expiry date: Jan 5, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface at the front side of the semiconductor body. The reservoir region includes no superjunction structure such that the reservoir region includes the semiconductor body that extends from a region located at the first surface to a drain region.