Patent · US Active

Magnetic tunnel junctions suitable for high temperature thermal processing

US10255935B2 · kind B2 · utility

7Cited by

0References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Lin Xue · San Diego, US
Chi Hong Ching · Santa Clara, US
Jaesoo Ahn · San Jose, US
Mahendra Pakala · San Jose, US
Rongjun Wang · Dublin, US

Key dates

Filing date	Jan 4, 2018
Grant date	Apr 9, 2019
Priority date	—
Expiry date	Jan 4, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/20
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.