Inventor · San Jose, CA, US

Jaesoo Ahn

28Patents
3h-index
29Co-inventors
59Inventor score

Filing activity: Mar 7, 2014 → Aug 8, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9564582B2 Method of forming magnetic tunneling junctions Electricity 12 Active
US10497858B1 Methods for forming structures for MRAM applications Electricity 9 Active
US10255935B2 Magnetic tunnel junctions suitable for high temperature thermal processing Electricity 7 Active
US10622011B2 Magnetic tunnel junctions suitable for high temperature thermal processing Electricity 3 Active
US9991118B2 Hybrid carbon hardmask for lateral hardmask recess reduction Electricity 3 Active
US11251364B2 Magnetic tunnel junctions suitable for high temperature thermal processing Electricity 2 Active
US11374170B2 Methods to form top contact to a magnetic tunnel junction Electricity 2 Active
US10157787B2 Method and apparatus for depositing cobalt in a feature Electricity 2 Active
US10756259B2 Spin orbit torque MRAM and manufacture thereof Electricity 2 Active
US10410864B2 Hybrid carbon hardmask for lateral hardmask recess reduction Electricity 1 Active
US11133460B2 Methods for forming structures with desired crystallinity for MRAM applications Electricity 1 Active
US12075628B2 Magnetic memory devices and methods of formation Electricity 0 Active
US11723283B2 Spin-orbit torque MRAM structure and manufacture thereof Electricity 0 Active
US11069853B2 Methods for forming structures for MRAM applications Electricity 0 Active
US11818959B2 Methods for forming structures for MRAM applications Electricity 0 Active
US10586914B2 Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions Electricity 0 Active
US11127760B2 Vertical transistor fabrication for memory applications Electricity 0 Active
US11145808B2 Methods for etching a structure for MRAM applications Electricity 0 Active
US11621393B2 Top buffer layer for magnetic tunnel junction application Electricity 0 Active
US11522126B2 Magnetic tunnel junctions with protection layers Electricity 0 Active
US11374165B2 Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions Electricity 0 Active
US12201030B2 Spin-orbit torque MRAM structure and manufacture thereof Electricity 0 Active
US11245069B2 Methods for forming structures with desired crystallinity for MRAM applications Electricity 0 Active
US10714388B2 Method and apparatus for depositing cobalt in a feature Electricity 0 Active
US10923652B2 Top buffer layer for magnetic tunnel junction application Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.