Semiconductor device and method of forming the semiconductor device

US10256145B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lawrence A. Clevenger · Saratoga Springs, US
• Baozhen Li · South Bend, US
• Kirk D. Peterson · Jericho, US
• John E. Sheets, II · Zumbrota, US
• Junli Wang · Slingerlands, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Dec 29, 2017
• Grant date: Apr 9, 2019
• Expiry date: Dec 29, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76895
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, and forming a copper contact in the first and second contact holes.