Process for forming a film on a substrate using multi-port injection assemblies
US10262859B2 · kind B2 · utility
396Cited by
1,210References
14Claims
0Family size
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Key dates
| Filing date | Jan 5, 2018 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Jan 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.