Patent · US Revoked

Pulsed valve manifold for atomic layer deposition

US10266946B2 · kind B2 · utility

0Cited by
85References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 6, 2017
Grant dateApr 23, 2019
Priority date
Expiry dateApr 30, 2037

Classification

  • Technology area (CPC —)General

Abstract

A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.