Etching substrates using ale and selective deposition

US10269566B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Samantha Tan · Fremont, US
• Jengyi Yu · San Ramon, US
• Richard Wise · Los Gatos, US
• Nader Shamma · Cupertino, US
• Yang Pan · Singapore, SG

Key dates

• Filing date: Apr 21, 2017
• Grant date: Apr 23, 2019
• Expiry date: May 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/334
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.