Methods, apparatus and system for replacement contact for a finFET device
US10269654B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2018 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system disclosed herein involves forming trench silicide region contact. A plurality of fins are formed on a semiconductor substrate. An epitaxial (EPI) feature is formed at a top portion of each fin of the first portion over a first portion of the fins. A gate region is formed over a second portion of the fins. A replacement metal gate (RMG) process is performed in the gate region. A trench is formed in a portion of the gate region. A void is formed adjacent the a portion of the gate region. A first silicon feature is formed in the trench. A second silicon feature is formed in the void. A TS cut region is formed over the trench. The first silicon feature and the second silicon feature are removed. A metallization process is performed in the void to form a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.