Patent · US Active

Resistive random access memory (RRAM) cell filament formation using current waveforms

US10276236B2 · kind B2 · utility

0Cited by

3References

22Claims

0Family size

Assignees

Inventors

Santosh Hariharan · San Jose, US
Hieu Van Tran · San Jose, US
Feng Zhou · Ann Arbor, US
Xian Liu · Sunnyvale, US
Steven Lemke · Boulder Creek, US
Nhan Do · Saratoga, US
Zhixian Chen · Singapore, SG
Xinpeng Wang · Singapore, SG

Key dates

Filing date	May 17, 2017
Grant date	Apr 30, 2019
Priority date	—
Expiry date	May 17, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.