Inventor · Saratoga, CA, US

Nhan Do

185Patents
10h-index
76Co-inventors
83Inventor score

Filing activity: Jun 5, 1998 → Apr 24, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9887206B2 Method of making split gate non-volatile memory cell with 3D FinFET structure Electricity 53 Active
US9276005B1 Non-volatile memory array with concurrently formed low and high voltage logic devices Electricity 28 Active
US6140832A Method of utilizing IDDQ tests to screen out defective parts Physics 22 Expired
US10269440B2 Flash memory array with individual memory cell read, program and erase Physics 17 Active
US8711636B2 Method of operating a split gate flash memory cell with coupling gate Electricity 17 Active
US10748630B2 High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks Physics 16 Active
US8148768B2 Non-volatile memory cell with self aligned floating and erase gates, and method of making same Electricity 14 Active
US10720217B1 Memory device and method for varying program state separation based upon frequency of use Electricity 11 Active
US9634018B2 Split gate non-volatile memory cell with 3D finFET structure, and method of making same Electricity 11 Active
US9634019B1 Non-volatile split gate memory cells with integrated high K metal gate, and method of making same Electricity 11 Active
US9496369B2 Method of forming split-gate memory cell array along with low and high voltage logic devices Electricity 9 Active
US9972630B2 Split gate non-volatile flash memory cell having metal gates and method of making same Electricity 8 Active
US9985042B2 Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells Electricity 8 Active
US9286982B2 Flash memory system with EEPROM functionality Physics 7 Active
US9431407B2 Method of making embedded memory device with silicon-on-insulator substrate Electricity 7 Active
US10418451B1 Split-gate flash memory cell with varying insulation gate oxides, and method of forming same Electricity 7 Active
US9293204B2 Non-volatile memory cell with self aligned floating and erase gates, and method of making same Electricity 7 Active
US8785307B2 Method of forming a memory cell by reducing diffusion of dopants under a gate Electricity 6 Active
US10937794B2 Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same Electricity 6 Active
US9245638B2 Method of operating a split gate flash memory cell with coupling gate Electricity 6 Active
US9721958B2 Method of forming self-aligned split-gate memory cell array with metal gates and logic devices Electricity 5 Active
US11409352B2 Power management for an analog neural memory in a deep learning artificial neural network Physics 5 Active
US11270771B2 Neural network classifier using array of stacked gate non-volatile memory cells Electricity 5 Active
US9570592B2 Method of forming split gate memory cells with 5 volt logic devices Electricity 5 Active
US10312247B1 Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.