In-situ metrology method for thickness measurement during PECVD processes
US10281261B2 · kind B2 · utility
2Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2016 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.