Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2011 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Apr 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32422
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.