Semiconductor device with metal gate
US10290723B2 · kind B2 · utility
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4References
7Claims
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Assignee
Inventors
Key dates
| Filing date | May 17, 2018 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.