Nanoparticle-based resistive memory device and methods for manufacturing the same
US10290804B2 · kind B2 · utility
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5References
25Claims
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Key dates
| Filing date | Jun 29, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Resistive memory cells containing nanoparticles are formed between two electrodes. The nanoparticles may be embedded in a matrix or sintered together without a matrix. The memory cells may be projected memory cells or barrier modulated cells. Polymeric ligands may be used to deposit the nanoparticles over a substrate, followed by an optional removal or replacement of the polymeric ligands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.