Extreme ultraviolet lithography system that utilizes pattern stitching
US10295911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70475
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.