Method for manufacturing silicon wafer
US10297463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon wafer having a denuded zone in a surface layer by performing a heat treatment to a silicon wafer, including: a step A, performing a first rapid heat treatment of 0.01 msec or more and 100 msec or less to an upper surface layer alone of the silicon wafer to be treated at 1300° C. or more and a silicon melting point or less by using a first heat source which heats the silicon wafer to be treated from above; and a step B, holding the silicon wafer to be treated at 1100° C. or more and less than 1300° C. for one second or more and 100 seconds or less by a second rapid heat treatment using a second heat source which heats the silicon wafer to be heated, and decreasing the temperature at a falling rate of 30° C./sec or more and 150° C./sec or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.