Multi regime plasma wafer processing to increase directionality of ions
US10304662B2 · kind B2 · utility
2Cited by
1References
26Claims
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Key dates
| Filing date | Jun 14, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Jun 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.