Ion implantation to alter etch rate
US10325754B2 · kind B2 · utility
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2References
14Claims
0Family size
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Inventors
Key dates
| Filing date | Jan 10, 2014 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Implanting a material in a pattern hardens the material in the pattern for subsequent etching. When the region is etched, by ion beam sputtering, chemically enhanced charged particle beam etching, or chemical etching, a thicker structure remains because of the reduced etch rate of the hardened pattern. The invention is particularly useful for the preparation of thin lamella for viewing on a transmission electron microscope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.