Etching method and etching apparatus
US10325781B2 · kind B2 · utility
2Cited by
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12Claims
0Family size
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Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.