High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
US10325800B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2014 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Jan 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.