Self-aligned gate contact and cross-coupling contact formation
US10326002B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2018 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Jun 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming self-aligned gate contacts and cross-coupling contacts for field-effect transistors and structures for field effect-transistors that include self-aligned gate contacts and cross-coupling contacts. A sidewall spacer is formed at a sidewall of a gate structure and an epitaxial semiconductor layer is formed adjacent to the sidewall spacer. After forming the epitaxial semiconductor layer, the sidewall spacer is recessed with a first etching process. After recessing the spacer, the gate structure is recessed with a second etching process. After recessing the gate structure, a cross-coupling contact is formed that connects the gate structure with the epitaxial semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.