Precision beol resistors

US10332956B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Baozhen Li · South Bend, US
• Kirk D. Peterson · Jericho, US
• John E. Sheets, II · Zumbrota, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Junli Wang · Slingerlands, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Nov 17, 2017
• Grant date: Jun 25, 2019
• Expiry date: Nov 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure that includes a resistor that is located within an interconnect dielectric material layer of an interconnect level is provided. The resistor includes a diffusion barrier material that is present at a bottom of a feature that is located in the interconnect dielectric material layer. In some embodiments, the resistor has a topmost surface that is located entirely beneath a topmost surface of the interconnect dielectric material layer. In such an embodiment, the resistor is provided by removing sidewall portions of a diffusion barrier liner that surrounds a metal-containing structure. The removal of the sidewall portions of the diffusion barrier liner reduces the parasitic noise that is contributed to the sidewall portions of a resistor that includes such a diffusion barrier liner. Improved precision can also be obtained since sidewall portions may have a high thickness variation which may adversely affect the resistor's precision.