N-channel bipolar power semiconductor device with p-layer in the drift volume

US10332973B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roman Baburske · Otterfing, DE
• Markus Bina · Sauerlach, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Oana Julia Spulber · Neubiberg, DE

Key dates

• Filing date: May 22, 2018
• Grant date: Jun 25, 2019
• Expiry date: May 22, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion of the semiconductor body; a trench of a first trench type extending in the semiconductor body along an extension direction and being arranged adjacent to the semiconductor channel region, the trench of the first trench type including a control electrode that is insulated from the semiconductor body. The semiconductor body further comprises: a barrier region and a drift volume having at least a first drift region wherein the barrier region couples the first drift region with the semiconductor channel region.