Markus Bina
19Patents
3h-index
21Co-inventors
49Inventor score
Filing activity: Feb 29, 2016 → Dec 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10332973B2 | N-channel bipolar power semiconductor device with p-layer in the drift volume | Electricity | 8 | Active |
| US10615272B2 | Method for producing IGBT with dV/dt controllability | Electricity | 3 | Active |
| US10304952B2 | Power semiconductor device with dV/dt controllability and cross-trench arrangement | Electricity | 3 | Active |
| US10276681B2 | Double gate transistor device and method of operating | Electricity | 1 | Active |
| US10644141B2 | Power semiconductor device with dV/dt controllability | Electricity | 1 | Active |
| US10355116B2 | Power semiconductor device | Electricity | 1 | Active |
| US10840362B2 | IGBT with dV/dt controllability | Electricity | 1 | Active |
| US10530360B2 | Double gate transistor device and method of operating | Electricity | 1 | Active |
| US11250966B2 | Apparatus and method for neutron transmutation doping of semiconductor wafers | Physics | 0 | Active |
| US10153764B2 | Current measurement in a power semiconductor device | Electricity | 0 | Active |
| US10468148B2 | Apparatus and method for neutron transmutation doping of semiconductor wafers | Physics | 0 | Active |
| US10546939B2 | N-channel bipolar power semiconductor device with P-layer in the drift volume | Electricity | 0 | Active |
| US10978596B2 | Power diode and method of manufacturing a power diode | Electricity | 0 | Active |
| US10923578B2 | Semiconductor device comprising a barrier region | Electricity | 0 | Active |
| US9978851B2 | n-channel bipolar power semiconductor device with p-layer in the drift volume | Electricity | 0 | Active |
| US12003231B2 | Double gate transistor device and method of operating | Electricity | 0 | Active |
| US11075290B2 | Power semiconductor device having a cross-trench arrangement | Electricity | 0 | Active |
| US10903353B2 | Double gate transistor device and method of operating | Electricity | 0 | Active |
| US10109624B2 | Semiconductor device comprising transistor cell units with different threshold voltages | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.