Patent · US Active

Monolayer film mediated precision film deposition

US10340137B2 · kind B2 · utility

0Cited by
3References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 24, 2017
Grant dateJul 2, 2019
Priority date
Expiry dateJul 24, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31051
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of forming a thin film is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of an organic precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to mix the adsorbed carbon-containing film with the material of the underlying substrate and form a mixed film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.