Patent · US Active

Methods and mask structures for substantially defect-free epitaxial growth

US10340139B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

IMEC · BE

Inventors

Benjamin Vincent · San Francisco, US
Voon-Yew Thean · Fishkill, US
Liesbeth Witters · Linden, BE

Key dates

Filing date	Oct 25, 2016
Grant date	Jul 2, 2019
Priority date	—
Expiry date	Nov 12, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.