Methods, apparatus and system for self-aligned metal hard masks

US10340142B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jinsheng Gao · Clifton Park, US
• Daniel Jaeger · Saratoga Springs, US
• Michael V. Aquilino · Wappingers Falls, US
• Patrick Carpenter · Saratoga Springs, US
• Jiehui Shu · Clifton Park, US
• Pei Liu · Clifton Park, US
• Jinping Liu · Ballston Lake, US

Key dates

• Filing date: Mar 12, 2018
• Grant date: Jul 2, 2019
• Expiry date: Mar 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

At least one method, apparatus and system disclosed herein involves forming semiconductor devices comprising vertically aligned gates, metal hard masks, and nitride regions. The semiconductor device may contain a semiconductor substrate; a gate disposed on the semiconductor substrate; a metal hard mask vertically aligned with the gate; a nitride region vertically aligned with the gate and the metal hard mask; and source/drain (S/D) regions disposed in proximity to the gate.