Transistor device having a pillar structure
US10340372B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2018 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Apr 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus can include an epitaxial layer of the first conductivity type, and a body region of a second conductivity type disposed in the mesa region and disposed between the source region and the epitaxial layer of the first conductivity type. The apparatus can include a pillar of the second conductivity type disposed in the mesa region such that a first portion of the source region is disposed lateral to the pillar and a second portion of the source region is disposed above the pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.